n-Tetrasilane (Si4H10) the thin film density, deposition smoothness, continuity and dopants are all several 10 times higher than Disilane (Si2H6). n-Tetrasilane (Si4H10) will must be the key material of the advance process in semiconductor manufacturing and the semiconductor equipment manufacturers in next generation.
Our n-Tetrasilane (Si4H10) currently provide to Research, Academic, Developing institutions as well as the semiconductor equipment manufacturers as our highest priority.
Chemical Vapor Deposition (CVD) Principle
The electronic of our n-Tetrasilane (Si4H10) is 4N Grade.
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