Disilane (Si2H6) compares with Silane(SiH4), its density of thin film, deposition smoothness, continuity, dopants and characteristic of low temperature are all 10 times higher than Silane (SiH4). Therefore, Disilane (Si2H6) could substantially improve the efficiency of production and so on.
Disilane (Si2H6) has been the key material for the product of Advanced Semiconductor Process and Developing Process such as Integrated Circuit Process under 14 nm, 3D Nand, DRAM LTPS, Solar Cell and so on.
Disilane (Si2H6) is the key material in Advanced Semiconductor Process and related High-Speed computing products. Disilane (Si2H6) is used in Nanotechnology Process which will uniform its thin film and then deposit it on the surface at the chamber by Chemical Vapor Deposition (CVD).
Chemical Vapor Deposition (CVD) Principle
The electronic of our Disilane (Si2H6) is 4N8 Grade.
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