Trisilane (Si3H8) the thin film density, deposition smoothness, continuity and dopants are all 10 times higher than Disilane (Si2H6).
Trisilane (Si3H8) will must be the key material of the advance process in semiconductor manufacturing next step.
Our Trisilane (Si3H8) currently provide to Advanced Semiconductor Process as well as Research, Academic and Developing institutions as our highest priority.
Chemical Vapor Deposition (CVD) Principle
The electronic of our Trisilane (Si3H8) is 4N Grade.
If you need the details of these specifications, please do not hesitate to contact with us, thank you.
